The semiconductor industry gravitates continuously towards more efficiency and reduced sizes. Within the automotive industry, especially the so-called wide bandgap (WBG) materials such as Silicon Carbide (SiC) and Gallium Nitride (GaN) play a crucial role in future electronics developments. While SiC and GaN have comparable efficiency, GaN costs have proven to be much lower. hofer powertrain is a proactive player in automotive GaN technology with five years of GaN integration, over 30years of electronics development experience and a strong supplier partnership. After experiencing highly increased demand from automotive customers worldwide, hofer powertrain has decided to accelerate its 3-level inverter platform development, with its unique feature that enables 800V GaN applications.
Recently, the new inverter solution featuring GaN semiconductor technology has been highly acclaimed by the market. It proved to bring a substantial improvement in power electronics efficiency for a wide range of high-performance automotive applications with the ability to reach the future mass market. hofer powertrain has received a significant order for developing 3-level inverter solutions and is ready to cater to different performance requirements of other customers and their future vehicle models.
Are you interested in our technologies or the new solution for your automotive projects? Our deep knowledge of GaN semiconductor physics, extensive GaN device variants analysis, including technology comparison over the last years, and our strong competence in engineering electric drive systems help us design excellent future-proof systems fitted to your requirements.
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